Indium phosphide

Results: 82



#Item
41Semiconductor devices / Nitrides / Photovoltaics / Gallium arsenide / Multijunction photovoltaic cell / Indium gallium phosphide / Gallium nitride / Indium gallium arsenide / Lattice constant / Chemistry / Solar cells / Energy conversion

Optimal Materials and Deposition Technique Lead to Cost-Effective Solar Cell with Best-Ever Conversion Efficiency Based on NREL and Solar Junction technology, the commercial SJ3 concentrator solar cell—with 43.5% conve

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Source URL: www.nrel.gov

Language: English - Date: 2013-10-02 13:33:46
42Inorganic compounds / Semiconductor devices / Phosphides / Gallium arsenide / Nanowire / Light-emitting diode / Indium gallium phosphide / Gallium nitride / Gallium phosphide / Chemistry / Solar cells / Compound semiconductors

Energy & Environmental Science View Article Online Published on 17 April[removed]Downloaded by California Institute of Technology on[removed]:49:04.

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Source URL: daedalus.caltech.edu

Language: English - Date: 2013-11-13 14:50:09
43Semiconductor devices / Compound semiconductors / Inorganic compounds / Multijunction photovoltaic cell / Indium gallium arsenide / Gallium arsenide / Band gap / Heterojunction / Indium gallium phosphide / Chemistry / Solar cells / Energy conversion

21 January[removed]Volume 102 Number 3 Applied Physics Letters

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Source URL: daedalus.caltech.edu

Language: English - Date: 2013-02-07 19:44:45
44Energy conversion / Optoelectronics / Inorganic compounds / Indium gallium arsenide / Gallium arsenide / Multijunction photovoltaic cell / Ohmic contact / Indium gallium phosphide / Heterojunction / Chemistry / Solar cells / Semiconductor devices

APPLIED PHYSICS LETTERS 89, 102106 共2006兲 Direct-bonded GaAs/ InGaAs tandem solar cell Katsuaki Tanabe,a兲 Anna Fontcuberta i Morral,b兲 and Harry A. Atwaterb兲 Thomas J. Watson Laboratory of Applied Physics, Cal

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Source URL: daedalus.caltech.edu

Language: English - Date: 2006-11-13 12:48:05
45Semiconductor devices / Nitrides / Inorganic compounds / Multijunction photovoltaic cell / Indium gallium arsenide / Band gap / Gallium arsenide / Indium gallium phosphide / Heterojunction / Chemistry / Solar cells / Energy conversion

APPLIED PHYSICS LETTERS 98, 093502 共2011兲 Wide-band-gap InAlAs solar cell for an alternative multijunction approach Marina S. Leite,1,a兲 Robyn L. Woo,2 William D. Hong,2 Daniel C. Law,2 and Harry A. Atwater1 1

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Source URL: daedalus.caltech.edu

Language: English - Date: 2011-03-25 11:58:32
46Energy conversion / Semiconductor devices / Multijunction photovoltaic cell / Gallium arsenide / Indium gallium arsenide / Solar panel / P–n junction / Photovoltaics / Indium gallium phosphide / Chemistry / Solar cells / Energy

p-n Junction Heterostructure Device Physics Model of a Four Junction Solar Cell Melissa J. Griggs*, Brendan M. Kayes, and Harry A. Atwater California Institute of Technology, Thomas J. Watson, Sr. Laboratories of Applied

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Source URL: daedalus.caltech.edu

Language: English - Date: 2006-11-13 12:58:04
47Semiconductor devices / Indium gallium arsenide / Solar cells / Energy conversion / Indium phosphide / Gallium arsenide / Substrate / Wafer / Thermophotovoltaic / Chemistry / Semiconductor device fabrication / Optoelectronics

APPLIED PHYSICS LETTERS 91, 012108 共2007兲 High efficiency InGaAs solar cells on Si by InP layer transfer James M. Zahler Aonex Technologies, Pasadena, California 91106

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Source URL: daedalus.caltech.edu

Language: English - Date: 2007-09-06 19:39:06
48Optoelectronics / Solar cells / Gallium arsenide / Gallium nitride / DARPA / Indium phosphide / Indium gallium arsenide / Aluminium gallium arsenide / Monolithic microwave integrated circuit / Chemistry / Compound semiconductors / Inorganic compounds

Gallium Nitride & Related Wide Bandgap Materials and Devices Dr. Edgar J. Martinez Program Manager DARPATech 2000

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Source URL: archive.darpa.mil

Language: English - Date: 2000-10-06 09:22:18
49Energy conversion / Diode / Indium gallium phosphide / Gallium arsenide / Chemistry / Solar cells / Semiconductor devices

This cell type is an InGaP/GaAs/Ge on Ge substrate triple junction solar cell (efficiency class 30% advanced). The cell has an improved grid-design and is equipped with an integrated bypass diode, which protects the adja

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Source URL: azurspace.de

Language: English - Date: 2014-03-14 10:20:41
50Semiconductor devices / Optoelectronics / Wide bandgap semiconductors / Gallium nitride / Gallium arsenide / Light-emitting diode / Indium phosphide / Diode / Monolithic microwave integrated circuit / Chemistry / Compound semiconductors / Inorganic compounds

Good morning everyone, I am Edgar Martinez, Program Manager for the Microsystems Technology Office. Today, it is my pleasure to dedicate the next few minutes talking to you about transformations in future military system

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Source URL: archive.darpa.mil

Language: English - Date: 2000-10-16 12:09:40
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